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Numerical Methods

  1. M.S.Obrecht, "A new stable method for linearization of discretized basic semiconductor equations", Solid State Electronics, v.36, pp.643-648, 1993
  2. M.S. Obrecht, M.I. Elmasry, E.L. Heasell, "TRASIM - compact and efficient two-dimensional transient simulator for arbitrary planar semiconductor devices", IEEE Trans. CAD, vol. 14, pp. 447-458, April 1995
  3. M.S. Obrecht, K.-C. Wu, R.W. Dutton, E.L. Heasell and M.I. Elmasry, "Further improvements in decoupled methods for semiconductor device modeling", Proceedings of NUPAD V Conference, pp. 129-132, June 1994, Honolulu, Hawaii .
  4. M.S.Obrecht, E.L Heasell and M.I.Elmasry "Comparison of coupled and decoupled methods for semiconductor device modeling", COMPEL, vol. 13, pp. 785-794, Dec. 1994 .
  5. A.L.Alexandrov, M.S.Obrecht, G.V.Gadiyak, "Efficient finite-difference method for numerical modeling of thermal redistribution of interacting impurities under oxidizing ambient", Solid State Electronics, v.35, p.1549-1552, 1992 .
  6. G.V.Gadiyak, M.S.Obrecht, "The use of factorization methods for solving the charge transfer equations in semiconductor devices", Proceedings of the II International Conference on Numerical Modeling of Semiconductor Devices and Processes, Pineridge Press, Swansea, U.K., 1986 .
  7. M.S.Obrecht, M.I.Elmasry, "Speeding-up of convergence of Gummel iterations for transient simulation", Proceedings of the Ninth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits, Copper Mountains, CO, April 6-8, 1993, Front Range Press, pp.20-21 .
  8. M.S.Obrecht, M.I.Elmasry, "Speeding-up of convergence of Gummel iterations for transient simulation", COMPEL, vol. 12, N6, pp. 311-317, December 1993 .
  9. M.S.Obrecht, E.L Heasell and M.I.Elmasry "Comparison of coupled and decoupled methods for semiconductor device modeling", Proceedings of NASECODE X International Conference, pp. 56- 57, Boole Press, Dublin, June 1994 .
  10. M.S.Obrecht, E.L Heasell and M.I.Elmasry "New decoupled methods for semiconductor device modeling", Proceedings of the Third International Seminar on Simulation of Devices and Technologies, pp. 32-34, Obninsk, Russia, July 1994.

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Device Physics

  1. Yi Lin, Lan Wang, Michael S. Obrecht and Taj Manku "Quasi-3D Device Simulation for MicroWave Noise Characterization of MOS Devices", IEDM 1998 Technical Digest, pp. 77-80.
  2. M.S.Obrecht and E.L Heasell "A numerical analysis of transient charge partitioning", IEEE Trans. Electron Devices, vol.43, pp. 424-430, March 1996.
  3. M.S.Elrabaa, M.S.Obrecht, M.I.Elmasry, "A novel low-voltage low-power full-swing BiCMOS circuits", IEEE Journal of Solid State circuits, vol. 29, N 2, 1994 [4].
  4. M.S.Obrecht, E.L Heasell, J. Vlach and M.I.Elmasry "Transient Phenomena in High Speed Bipolar Devices", VLSI Design, vol. 8, Nos. 1-4, pp. 475-480.
  5. G.V.Gadiyak, M.S.Obrecht, S.P.Sinitsa, "Numerical simulation of bipolar injection and recombination in MNOS structure", COMPEL, v.5, N 4, p.227-234, 1986.
  6. G.V.Gadiyak, M.S.Obrecht, S.P.Sinitsa, "Numerical simulation of MNOS structures", Soviet microelectronics, v.11, N 3, p.26-31, 1985.
  7. G.V.Gadiyak, M.S.Obrecht, N.L.Shwarts, S.P.Sinitsa, "Modeling of MOSFETs by finite difference methods", Proceedings of NASECODE-IV conference, Boole Press, Dublin, 1985.
  8. O.V.Bobrikova, M.S.Obrecht, V.F.Stas', "Charge states of primary radiation defects and the defect formation processes in the space charge region of the silicon diode structures", Soviet Physics: Semiconductors, v.25, N 5, pp.501-507 (Fizika i Tekhnika Poluprovodnikov (Leningrad) v.25, N 5, pp.828-838,1991).
  9. M.S.Obrecht, E.L Heasell and M.I.Elmasry "Transient MOSFET Capacitance Model Revisited", International Conference on Microelectronics, Kuala Lumpur, Malaysia, December 1995.
  10. M.S.Obrecht, E.L Heasell and M.I.Elmasry "Transient Analysis of a CML BJT under High and Low Level Injection", International Seminar on Simulation of Devices and Technologies, Pretoria, South Africa, November 1995.
  11. M.S.Obrecht, E.L Heasell, J. Vlach and M.I.Elmasry "Transient Phenomena in High Speed Bipolar Devices", International Workshop on Computational Electronics, University of Notre Dame, IN, May 1997 .

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Software Tools

  1. M.S.Obrecht, "SIMOS - two-dimensional steady-state simulator for MOS-devices," Solid-State Electronics, Software Survey Section, vol. 32, No. 6, p.II, 1989.
  2. M.S.Obrecht, J.M.G.Teven, "BISIM - a program for two-dimensional steady-state modeling of bipolar devices," Solid-State Electronics, Software Survey Section, v.34, No 7, 1991.
  3. M.S.Obrecht, A.L.Alexandrov, "SIDIF - a program for two-dimensional modeling of diffusion and oxidation". Solid- State Electronics, Software Survey Section, v.34, No 8, 1991.
  4. G.V.Gadiyak, M.S.Obrecht, N.L.Shvarts, S.P.Sinitsa, "MOS2 - a program for steady-state two-dimensional modeling of MOSFETs Optoelectronics, Instrumentation and data processing", (Avtometriya), N 1, 1987 (Allerton Press, USA).
  5. A.L.Alexandrov, P.A.Androsenko, V.M.Bedanov, A.M.Bekesheva, E.E.Dagman, O.E.Dmitrieva, G.V.Gadiyak, V.P.Ginkin, M.S.Ivanov, Zh.I.Korobitsina, T.M.Lukhanova, M.S.Obrecht, A.A.Shimansky, V.A.Schveigert, E.G.Tishkovsky, Yu.P.Zhidkov, "MOPIT: Open system for device and technology simulation", COMPEL, v.11, pp.445-455, 1992.

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